Transistor action of metal (CoSi/sub 2/)/insulator (CaF/sub 2/) hot electron transistor structure

The first transistor action of tunnelling hot electron transistors with single-crystalline metal (CoSi 2 )/insulator (CaF 2 ) has been achieved. This device consists of CoSi 2 /CaF 2 heterofunctions grown on n-Si(111) substrate by ionised beam epitaxy for CaF 2 and a two step growth technique for CoSi 2 . Transfer efficiency was more than 0.9 for hot electrons through 1.9 nm-thick CoSi 2 metal base layer at 77 K