A Broadband Single-Pole Single-Throw Switch With Ground-Slot Coupling Structure in 65 nm Bulk CMOS

A novel ground-slot coupling structure (GSCS) for mm-wave switch design is proposed in this paper. For verification, a SPST switch based on the GSCS has been designed in a 65-nm bulk CMOS technology. The switch achieves insertion loss of less than 2.5 dB, isolation of large than 22.5 dB, return loss of more than 11 dB at 83–158 GHz, respectively. At the operating frequency of 120 GHz, the simulated power-handing capability is 12.9 dBm. The chip occupies a small silicon area of 0.0567 mm2 including all testing pads with a core size of only 0.009 mm2.