Oxide semiconductor light-emitting diode epitaxial wafer, device and manufacturing method thereof

The invention provides an oxide semiconductor light-emitting diode (LED) epitaxial wafer, a device and a manufacturing method thereof. The oxide semiconductor light-emitting diode epitaxial wafer comprises a substrate, and a template layer, an n type layer, a quantum well active layer, a carrier blocking layer and a p type layer deposited in sequence on the substrate, wherein doping elements in the p type layer at least comprise Mg; the carrier blocking layer is an oxide material containing the element Al, and the element Mg is only permeated into the p type layer at a later period but is not doped in an early depositing process. The non-intentionally-doped carrier blocking layer of a proper thickness is inserted between the active region of a quantum well and the p type layer, thereby the effectively reducing the diffusion effect of a doping agent, namely Mg, in the p type layer in the active region of the quantum well, and increasing the radiation composite efficiency of the quantum well, namely, effectively increasing the internal quantum efficiency of an oxide LED.