Low-temperature electron radiation damage in scandium

Abstract Electron irradiation of hcp scandium at T ⪅ 12 K allowed to determine the energy threshold for Frenkel-pair creation, T d = 13.8 ± 0.5 eV, and the defect resistivity, ϱ F ≈ 5 × 10 −3 Ω cm/F.P . The annealing spectrum exhibits four substages between 20 and 70 K, a broad substage centered at 105 K attributed to interstitial long-range migration, and a stage III between 240 and 300 K.