X-ray mapping in a scanning transmission electron microscope of InGaAs quantum dots with embedded fractional monolayers of aluminium

We investigate AlGaAs/GaAs superlattices as well as InGaAs/GaAs quantum wells (QWs) and epitaxial quantum dots (QDs) where during the molecular beam epitaxy of InGaAs QDs the aluminium flux cell was opened briefly to incorporate fractional monolayers of Al into the InGaAs. We show that X-ray mapping with a large collection angle is capable to detect 0.3-0.4 fractional Al monolayers with a resolution of just under 1nm.