Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source

Abstract The thermal effects on the I / V characteristics of p-SiGeC/n-Si heterojunction diode with C 3 H 8 as carbon source has been studied. Higher breakdown voltage under higher temperature is found. More Si atoms contained and less lattice misfit in SiGeC/Si interface are attributed to the improvement in high temperature I / V characteristics.