Iii nitride electronic device

PROBLEM TO BE SOLVED: To provide a group III nitride electronic device whose breakdown voltage can be increased. SOLUTION: Group III nitride electronic devices 31, 41, and 51 each has a semiinsulating group III nitride substrate 32 and a group III nitride laminate 34 provided on the substrate 32. The laminate 34 includes semiinsulating group III nitride epitaxial layers 35 and 36. The laminate 34 includes a gallium nitride-based semiconductor layer 37 provided between the semiinsulating group III nitride epitaxial layers 35 and 36, and the substrate 32. An interface 33 is formed of the gallium nitride-based semiconductor layer 37 and substrate 32. The gallium nitride-based semiconductor layer 37 contains at least one of Fe, Mg, and C of concentration ≥1/10 times as large as a peak value of silicon concentration. In the group III electronic device 31, Fe, Mg, or C contained in the gallium nitride-based semiconductor layer 37 reduces carriers from silicon piled up on the interface. COPYRIGHT: (C)2009,JPO&INPIT