Two-layer metal hard masks for use in dual-damascene Ätzschemata and method of providing the metal hard masks

Metal hard mask for providing a template for patterning a dielectric stack (16, 18), comprising: a patterned layer (70) of TiN (titanium nitride), the dielectric stack (16, 18) covered; and a cover layer (72) consists of TaN (tantalum nitride), which the patterned layer (70) of TiN covered, wherein the thickness of the layer (72) is made of TaN between 7.5 nm and 9.9 nm.