Normal-temperature and normal-pressure synthesizing method of Zr-Si-C ceramic precursor

The invention relates to a normal-temperature and normal-pressure synthesizing method of a Zr-Si-C ceramic precursor. The normal-temperature and normal-pressure synthesizing method includes the steps of firstly, dissolving dimethyl zirconium dicyclopentadiene in an organic solvent under inert gas atmosphere protection, stirring, adding an organic lithium compound and a ligand compound, and drying to obtain active zirconium dicyclopentadiene lithium salt; secondly, dissolving the active zirconium dicyclopentadiene lithium salt with an organic solvent under inert gas atmosphere protection, stirring, adding halogenated silane monomer, performing polymerization reaction, dropwise adding a terminating agent to terminate the reaction, filtering, concentrating, purifying, and drying to obtain the Zr-Si-C ceramic precursor. The normal-temperature and normal-pressure synthesizing method has the advantages that conditions such as high temperature, low temperature, high pressure and energizing are not needed, the reaction can be performed under normal temperature and normal pressure, the dimethyl zirconium dicyclopentadiene high in activity and cheap and safe n-butyl lithium are used to have reaction with the halogenated silane monomer so as to prepare the Zr-Si-C ceramic precursor through a two-step method, and the preparation method is simple, scientific and reasonable; the Zr-Si-C ceramic precursor synthesized by the method is diversified and can be used for prepared various kinds of Zr-Si-C ceramics.