InGaAs/InP submicron gate microwave power transistors for 20 GHz applications

Results of DC characteristic and RF power performance measurements on depletion mode InGaAs MISFETs with submicron gate lengths fabricated using an epitaxial process are presented. At 18 GHz, an output power density of 0.92 W/mm was obtained at an input power of 19.5 dBm. The corresponding gain and power-added efficiency were 3.2 dB and 29% respectively. The highest power-added efficiency obtained was 32% with a corresponding power gain and output power density of 4.3 dB and 0.86 W/mm, respectively, at an input power of 18 dBm. At 20 GHz, an output power density of 0.79 W/mm was obtained with a corresponding gain and power-added efficiency of 3.0 dB and 23%, respectively. The highest power-added efficiency was 25% at 0.73 W/mm output power density and 4.8 dB gain. >