GaN-Based High-Electron Mobility Transistors for High-Power and High-Frequency Application: A Review

The advancement of high-speed RF power electronics requires wide band gap semiconductor materials due to its high electron velocity, high breakdown voltage which makes the device to achieve high speed and high power simultaneously. GaN-based high-electron mobility transistors have demonstrated outstanding performance in the last two decades. This review article presents the recent development in GaN HEMT technologies for high-power microwave applications.