The interstitial boron and the boron-germanium complex in silicon-germanium crystals

Abstract The implantation behaviour of boron in silicon–germanium mixed crystals was studied. The β-NMR technique was used to measure electric field gradients at boron nuclei in defects. In addition, full-potential DFT calculations were performed to allow the interpretation on the basis of calculated bond lengths and electronic densities. Two defects were identified: a boron–germanium pair on lattice site in a relaxed silicon environment and a complex with interstitial boron.