Influence of SnS buffer layers on the growth and properties of nanostructured Bi2S3 films by chemical bath deposition

Abstract Nanostructured Bi 2 S 3 films that comprise rod-shaped particles were prepared on glass substrates by chemical bath deposition. When a SnS buffer layer was deposited on the substrate before the deposition of the Bi 2 S 3 films, the homogeneity and the adhesion of the prepared Bi 2 S 3 films are largely improved. Furthermore, when the buffer layer is inserted, the electrical conductivity of the films increases from lower than 10 −6  Ω −1  cm −1 to 4 × 10 −5  Ω −1  cm −1 , and the average optical absorption in the band between 350 nm and 800 nm increases from around 41% to around 76%. The reason for these results is considered to be that the SnS layer can promote the nucleation of the Bi 2 S 3 on the substrate.