Hole range in compensated hydrogenated amorphous silicon

Abstract Xerographic discharge measurements are reported on 10 μm thick compensated hydrogenated amorphous silicon samples for doping levels as high as 5000 ppm by weight. Excellent xerographic characteristics including photosensitivity, charge acceptance and hole range are maintained up to doping levels ∼100 ppm by weight. For higher doping levels both charge acceptance and hole range degrade due to associated increases in mid gap state densities.