Linear and nonlinear optical properties of Sb-doped GeSe2 thin films

Sb-doped Ge Se2 chalcogenide thin films are prepared by the magnetron co-sputtering method.The linear optical properties of as-deposited films are derived by analyzing transmission spectra.The refractive index rises and the optical band gap decreases from 2.08 e V to 1.41 e V with increasing the Sb content.X-ray photoelectron spectra further confirm the formation of a covalent Sb–Se bond.The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm.The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb.The nonlinear refraction indices of these thin films are measured to be on the order of 10-18m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10m/W.These excellent properties indicate that Sb-doped Ge–Se films have a good prospect in the applications of nonlinear optical devices.