Investigation of Thermal Removal of Native Oxide from Si (100) Surfaces in Hydrogen for Low‐Temperature Si CVD Epitaxy

We studied surface cleaning by thermal removal of native oxide from the Si (100) surface in hydrogen using a newly developed ultrahigh vacuum chemical vapor deposition (UHV/CVD) system. Auger analysis results show native oxide on the Si (100) surface formed by HCl/H 2 O 2 boiling abruptly desorbed at a substrate temperature of 710 o C in UHV at 2.0×10 -6 Pa, and at 160 o C in hydrogen at 3.3×10 2 Pa. The increase of the native oxide removal temperature by the introduction of hydrogen was caused by a decrease of desorption probability of volatile SiO from the surface