Minority carrier lifetime and diffusion length in type II superlattice barrier devices

Abstract The minority carrier lifetime in p -type InAs/GaSb type II superlattices (T2SLs) is quite short, typically in the region of tens of nanoseconds. In spite of this, T2SLs are becoming a viable alternative to Mercury Cadmium Telluride as the sensing material of choice for high end MWIR and LWIR infrared detectors. For example, SCD now manufactures a 640 × 512 format, 15 μm pitch LWIR focal plane array detector, with a quantum efficiency close to 50%, a pixel operability of >99.5%, and a dark current only about one order of magnitude larger than the state of the art Rule 07 value. A key to the very high performance of this detector is the use of an XB p barrier architecture that both suppresses the G-R current and allows stable passivation to all steps of the fabrication process. Since both the dark-current and photo-current in the XB p structure are diffusion limited, measurements of these quantities as a function of the device dimension provide an excellent vehicle for estimating the minority carrier lifetime and diffusion length, when performed in conjunction with k ⋅ p calculations of the T2SL density of states. Typical lifetime results are presented, which are consistent with values found by others using direct measurements. Diffusion lengths are reported in the range 3–7 μm, although these are not necessary limiting values.