CrSi(O,N)‐based cermet‐like material for high‐ohmic thin film resistor applications

The thin film material CrSi(O,N) has been investigated with the aim to realize resistive films with precision properties in the resistivity range between 2 and 20 mΩcm. The resistor layers were prepared by radio-frequency magnetron sputtering from cermet targets containing all functionally required film components. The influence of typical technological parameters as argon pressure, source power, and target–substrate distance on the film properties was studied. Depending on target composition, preparation conditions, and thermal treatment, the attainable resistivity limits of the precision parameters temperature coefficient of resistivity (TCR) and long time stability (ΔR/R) were determined. It could be shown that two of the studied target materials achieve the resistivity range 2 mΩcm < ρ < 20 mΩcm with the resistor parameters TCR of 10 ppm K−1 and ΔR/R of <0.2%.