Microwave characterisation of 1 μm-gate AI 0.48 In 0.52 As/Ga 0.47 In 0.53 As/InP MODFETs

We report microwave characterisation of nominally 1μm-gate AI0.48In0.52AssGa0.47In0.53As (lattice-matched to InP) modulation-doped field-effect transistors (MODFETs). The AI0.48In0.52AssGa0.47In0.53As MODFETs have room-temperature extrinsic transconductances as high as 250 mSs mm. A room-temperature unity-current-gain cutoff frequency (fT) of 22 GHz and an fmax of 35 GHz were measured for a 1.2mm-gate MODFET.