Characterizations of In z Ga1−z As1−x−yN x Sb y P-i-N structures grown on GaAs by molecular beam epitaxy

The GaAs-based double-heterojunction P-i-N structures using In z Ga1−zAs1−x−yN x Sb y as the i-layer is investigated for the first time using solid source molecular beam epitaxy. High quality coherent bulk InGaAsN3.45%Sb (0.5 μm) with a lattice-mismatch of 2.6 × 10−3 can be achieved due to the surfactant properties of antimony, while the bulk InGaAsN2% at 0.5 μm with 1.06× 10−3 mismatch is fully relaxed. Rapid thermal annealing (RTA) resulted in ∼25 meV low temperature (LT) photoluminescence (PL) full-width half-maximums (FWHM) for the bulk InGaAsNSb layers. InGaAsNSb experiences 30% less blueshifting with subjected under the same annealing conditions as InGaAsN with similar N content. Room temperature (RT) absorption measurements are in the range of 0.9–1.4 eV. The absorption edge of 1.41 μm is achieved for sample D4.