Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator

Abstract We have applied wet oxidation to the isolation and gate oxidation of strained-Si/SiGe-on-insulator (SGOI) wafers. Wet oxidation of Si 0.8 Ge 0.2 at 700 °C proceeds 30 times as fast as the oxidation rate of strained-Si and without forming a Ge condensed layer behind (SiGe)O 2 . P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) on 15% Ge strained-Si/SGOI wafers were fabricated using wet oxidation to simultaneously form the (SiGe)O 2 field oxide and the gate SiO 2 . Transconductance was found to be enhanced by 50% when compared with unstrained SOI devices.