Infrared photoluminescence imaging of infrared materials: HgCdTe/Cd(Zn)Te heterostructures

We demonstrate the application of infrared photoluminescence (IRPL) imaging technique for the structural studies of infrared materials such as HgCdTe/Cd(Zn)Te heterostructures grown by liquid phase epitaxy (LPE). The two-dimensional IRPL maps were recorded in the near-infrared range at fixed wavelengths corresponded to the maximums of Cd(Zn)Te PL emission bands. The results of IRPL imaging studies were compared with the structure characterization data of HgCdTe/Cd(Zn)Te heterostructures, which were obtained by X-ray imaging techniques (in particular, synchrotron white beam back reflection topography).