Stress and microstructure evolution in thick sputtered films

Materials synthesized by deposition techniques are often plagued by high levels of residual stress. While the origin and control of this stress in thin (sub-micron) films has been an active area of research, it is not clear how the results extrapolate with thickness. In the present work, in situ residual stress measurements are performed during the sputter deposition of beryllium, spanning the transition from thin to thick. Variables including sputtering gas pressure and substrate biasing are shown to strongly affect both the average and instantaneous stress levels measured during film growth. Detailed microstructural characterization is performed to assess the grain structure, surface morphology, and crystallographic growth texture of representative specimens. The microstructure is correlated with theoretical models of stress generation to interpret experimental measurements. A stress map is also constructed, generalizing the effects of processing and material parameters on stress state.