The ring plasma neutralizer for ion beam devices

Abstract A ring plasma neutralizer was made to neutralize the surface of an insulator undergoing implantation. It consisted of a ring discharge chamber with a solenoid coil and permanent magnets which supply the plasma to the ion beam and substrate. A 2.45 GHz microwave and Ar gas were introduced into the discharge chamber. Before being used with ion beam devices, the basic performance characteristics of the neutralizer were obtained. The current which was transported from the plasma source to the substrate was more than 60 mA at a substrate voltage of 10 V. The electron density and electron temperature of the plasma were 3 × 10 11 cm -3 and 4 eV respectively. These results confirmed that the neutralizer functioned as intended.