Investigation of In2O3:SnO2 films with different doping ratio and application as transparent conducting electrode in silicon heterojunction solar cell

Abstract Transparent conducting oxide films were performed from SnO2-doped In2O3 with different doping ratio of 97:3 and 95:5 (ITO) by pulsed DC magnetron sputtering in argon and oxygen atmosphere. The effect of oxygen content on the structural, electrical and optical properties of films was investigated. Proper oxygen content improved the properties of ITO films. All films showed the polycrystalline structures. The optimal Hall mobility and resistivity reached 32.2 cm2/V·S and 4.5 × 10−4 Ω cm, respectively. The average transmittance in the 400–1100 nm wavelength range was above 88 %. The optimized ITO films with Lightly and heavily doped ratio are appropriately chosen as front and back electrode of silicon heterojunction solar cells respectively, and the conversion efficiency of more than 24 % were obtained.