A method and system for producing silicon carbide crystalline material

A method for producing silicon carbide crystalline material, the method comprising: Introducing at least one silicon carbide seed crystal (28) in a silicon carbide growth chamber (20), wherein one of the silicon carbide seed crystals (28) a first silicon carbide growth surface (30) with a first growth plane for supporting the growth of a silicon carbide crystal of a silicon carbide source material (26) in a first crystallographic direction corresponding to the first growth plane, Supplying the silicon carbide source material (26) in the silicon carbide growth chamber (20), Introducing a plurality of silicon carbide crystal growth dividers (32) in the silicon carbide growth chamber (20), wherein the growth divider (32) having opposed major surfaces (40), which are aligned perpendicular to said first growth surface, the growth divider (32) from each other, the at least one silicon carbide seed crystal (28) and said silicon carbide source material (26) are spaced to form a plurality of passages (34) between the growth dividers (32) with a sufficient size to allow therebetween the growth of silicon carbide crystals , and Growth of silicon carbide crystalline material on the first growth surface in the first crystallographic direction into said passages (34) to form a plurality of silicon carbide crystals having opposing surfaces that are perpendicular to said first growth surface, wherein the opposite surfaces of the silicon carbide crystal, a second growth surface with forming a second growth plane that is different from said first growth plane, wherein said second growth plane holds the growth of silicon carbide crystal from the silicon carbide source material (26) in a second crystallographic direction.