Study and Modeling of the Impact of TID on the ATREE Response in LM124 Operational Amplifier

Shapes of ATREEs (Analog Transient Radiation Effects on Electronics) in a bipolar integrated circuit change with exposure to Total Ionizing Dose (TID) radiation. The impact of TID on ATREEs is investigated in the LM124 operational amplifier (opamp) from three different manufacturers. Significant variations are observed on the ATREE responsesfrom different manufacturers. The ATREEs are produced by pulsed X-ray experiments. ASET laser mappings are performed to highlight the sensitive bipolar transistors, explaining the ATREE phenomena variations from one manufacturer to another one. ATREE modeling results are presented using a previously developed simulation tool. A good agreement is observed between experimental ATREE responses and model outputs whatever the TID level, the prompt dose level, the amplifier configuration and the device manufacturer.