Modification of Hg1−xCdxTe and related materials by ion-beam treatment

Abstract Modification of ternary Hg 1− x Cd x Te alloys with 0.21≤ x ≤0.55 and quaternary Hg 1− y − z Zn y Cd z Te alloys by treatment with low-energy ( E 1− x Cd x Te with 0.28≤ x ≤0.39, it is essential to use a neutralised ion beam. The observed dependence of the conversion depth on x agrees with the diffusion conversion model. The effect of self-compensation of intrinsic acceptor defects by intrinsic donors during the annealing prior to ion treatment is confirmed. This effect provides the possibility of controlling the carrier concentration in the n-region of p–n junctions fabricated by ion-beam treatment in vacancy-doped Hg 1− x Cd x Te.