Comparative study between semiconductor power devices based on silicon Si, silicon carbide SiC and gallium nitrate GaN used in the electrical system subassembly of an electric vehicle

The development of electric vehicles has stimulated the semiconductor industry, mainly the development of switching elements for all electric converters. The comparison made in this paper is made from an electrical point of view for different types of semiconductor devices used in the equipment of the electrical system of electric vehicles, such as DC / DC converters, on-board charger, traction inverters. Increasing the autonomy of movement of the vehicle is directly influenced by reducing the energy consumption of the battery and therefore increasing the energy efficiency of these subassemblies by using high-performance semiconductor devices. Although silicon has dominated the world of power semiconductor devices for decades, today new types of composite semiconductors have been used to develop more energy-efficient devices, such as gallium nitride or carbide power transistors. of silicon.