An image sensor, an imaging apparatus and method and apparatus for manufacturing an image sensor

The present invention relates to an interface capable of inhibiting the silicon substrate an interface state deteriorates the back-illuminated image sensor using a complementary metal oxide semiconductor (CMOS), the image forming apparatus comprising the image sensor and a manufacturing method and apparatus for the image sensor the back-illuminated image sensor comprising: a light receiving unit, which is formed in the semiconductor substrate, and for receiving incident light; antireflection film, which is formed therein with a back surface of the semiconductor substrate is formed of the light receiving unit an upper side; and a silicon oxide film formed on the back side of the anti-reflection film, the silicon oxide film having a refractive index lower than that of the silicon nitride film and the back surface side in a higher density than the front side in which density.