An analysis of P-Si/sub x/O/sub y/ N/sub (1-y)/H/sub z/ film (y=0 approximately 1) quality affecting aluminum slit-like open metallization

A study of the P-Si/sub x/O/sub y/ N/sub (1-y)/H/sub z/ (y=0 approximately 1) passivation film quality causing aluminum slitlike open metallization is reported. Slitlike open metallization after 150 degrees C, 1000-h aging with various P-Si/sub x/O/sub y/ N/sub (1-y)/H/sub z/ compositions revealed that the higher the deposition temperature and the closer the composition to the oxide (y=1), the more the open failure took place. These results can be explained satisfactorily on the basis of the stress-temperature relation of the two extremes, P-Si/sub x/O and P-Si/sub x/N/sub y/H/sub z/. >