Annealing effect on the characteristics of MTIS solar cells

Abstract Modification of interface parameters of solar cells with a metal-thin insulator-semiconductor structure depending on annealing has been investigated. It has been shown that as a result of annealing the dark current is drastically increased, the ideality factor and photocurrent is slightly increased. Furthermore annealing increases the interface state density, especially in the middle of the band-gap. The mechanisms underlying modification of the solar cell parameters after annealing are discussed.