Study of the growth of CuAlS2 thin films on oriented silicon (111)

Abstract Within the chalcopyrite family the sulphur based compounds CuMS 2 (M = In, Ga, Al) have attracted much interest in recent years because they show a direct wide band-gap covering from E gap  = 1.53 eV (CuInS 2 ) over E gap  = 2.43 eV (CuGaS 2 ) to E gap  = 3.49 eV (CuAlS 2 ). Therefore they are particularly suitable for optoelectronic as well as photovoltaic applications. The CuAlS 2 semiconductor is one of these compounds and has good luminescent properties and a wide direct gap of 3.5 eV making it suitable for the use as material for light-emitting devices in the blue region of the spectrum. To dig up fully its potential a better understanding of the fundamental properties of the CuAlS 2 film itself is essential, which could be achieved from high-quality single-crystalline materials. So, the aim of this work has been to study the growth of multilayer CuAlS 2 thin films on Si(111) substrates at a substrate temperature of 723 K. One, two and three layers with 60, 120 and 180 nm thicknesses, respectively, were deposited on Si(111) substrate. The effect of the CuAlS 2 layer numbers on the structure, morphology and optical properties of the samples was investigated. The X-ray diffraction studies revealed that all the samples are polycrystalline in nature, single CuAlS 2 phase and exhibiting chalcopyrite structure with a preferred orientation along the (112) direction. However, the sample with three CuAlS 2 layers exhibit the highly oriented (112) plane with grain sizes of 80 nm. So we show that this experimental process affects significantly the structural properties of the CuAlS 2 films. Raman spectroscopic measurements indicated five prominent peaks at 193, 205, 325, 335 and 370 cm − 1 . The possible origin of the 370 cm − 1 peak was investigated and was found to be some local vibration in the structure. The peaks at 193–205 and 335 cm − 1 were ascribed to A 1 and B 2 modes, respectively.