Zero-thickness multi work function solutions for N7 bulk FinFETs

A novel multi work function process is used to demonstrate up to 250 mV effective work function shifts of nMOS devices. The process use SiH 4 -soak of ALD TiN to change its barrier properties with ALD TiAl. FinFET devices are demonstrated with ∼100 mV V T -shift for 24-nm-L G devices resulting in 20× reduction in off-state leakage at unaffected sub threshold slope and improved mismatch behavior. A patterning scheme using an nMOS first RMG process is proposed and demonstrated.