Enhanced Photoluminescence Intensity of Silicon–Germanium Nanoparticles: Silica Thin Films by Annealing in Forming Gas

Silicon–germanium nanoparticles are prepared by ion implantation and annealing method. Further annealing treatment is carried out in forming gas to passivate nonradiative defects around nanoparticles. Time-resolved photoluminescence measurements were examined to reveal the local environment surrounding the nanoparticles. With the increase in oxygen gas content, photoluminescence intensity from specimen is enhanced by ∼5 times and its decay time τ decreases from 23.2 to 1.6 µs. Oxygen gas is considered to be an effective passivating gas for this kind of specimen.