Study of the inversion behaviors of Al2O3/InxGa1−xAs metal–oxide–semiconductor capacitors with different In contents

Abstract In x Ga 1− x As III–V compound semiconductor metal–oxide–semiconductor field-effect transistors have become a popular topic recently due to the higher drift velocity, and lower effective mass of the In x Ga 1− x As materials. The impact of In content on the accumulation and inversion behaviors of the Al 2 O 3 /In x Ga 1− x As capacitors is investigated in this study. For the various In x Ga 1− x As materials studied, the Al 2 O 3 /InAs MOS system showed the strongest inversion phenomena due to the shorter response time of minority carrier of InAs compared to other In x Ga 1− x As materials. Also, very low gate leakage current in the 10 −8  A/cm 2 range was observed for these capacitors. These results demonstrate that Al 2 O 3 /InAs MOS system with strong inversion phenomena and low leakage gate current is potential candidate for future high-performance low power logic MOSFET applications.