Preparation method of self-aligned tunneling field effect transistor

The invention belongs to the field of microelectronic technique, in particular discloses a preparation method of a tunneling field effect transistor (TFET). The invention uses a self-aligned technology to form the TFET. The preparation method of the TFET has simple technology, the technology for forming the TFET has a self-aligned characteristic, and the forming processes of a source electrode and a drain electrode of the TFET can be separated, thus a source electrode structure different from a substrate material can be formed easily.