The photovoltaic conversion enhancement of NiO/Tm:CeO2/SnO2 transparent p-n junction device with dual-functional Tm:CeO2 quantum dots

Abstract The transparent NiO/Tm:CeO2 QDs/SnO2 p-n junction device is prepared via a continuous hydrothermal-chemical-sputtering method. There, the SnO2 nanosheets arrays are grown via the hydrothermal method, then the Tm:CeO2 quantum dots (QDs), prepared via the chemical method, are introduced on the surface of the arrays, subsequently the NiO film is deposited via the sputtering. As demonstrated, the transparent device exhibits highly transmittance of about ~85% in visible light, evident photovoltaic conversion enhancement of about ~104(~9700) folds than the unmodified device, that can be mainly ascribed to the dual-functional Tm:CeO2 QDs transition layer modification, there, the upconversion fluorescence can increase the solar utilization, and the appropriate Fermi level can accelerate the photo-generated charge carrier transport. In addition, the Tm:CeO2 QDs transition layer can improve the p-n junction interface and the SnO2 nanosheets arrays can increase the solar utilization are also important factors.