Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wells

Photocurrent spectra of InxGa1−xAs/GaAs multiple quantum well structures grown by molecular beam epitaxy are studied in the presence of electric fields perpendicular to the heterointerface. Several Δn=0 allowed and Δn≠0 forbidden excitonic transitions are observed. Both negative and positive shifts of exciton transitions are found. Good agreement is found between the photocurrent observations and calculations using a multiband effective‐mass approach, taking into account the strain‐induced splitting.