Gap widths for (TlGaSe/sub 2/)/sub 1-x/(TlInS/sub 2/)/sub x/ solid solutions

(TlGaSe/sub 2/)/sub 1-x/(TlInS/sub 2/)/sub x/ solid-solution single crystals with x in the ranges 0-0.45 and 0.55-1 were grown by the Bridgman-Stockbarger method. The ohmic contacts were formed with indium. The electric field was along the natural layers in the photoconductivity measurements while the light was perpendicular to them. All the measurements were made at voltages corresponding to the linear part of the voltage-current curve. The photoconductivity spectra were measured with a DMR-4 monochromator.