Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers

High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask- and development-less patterning scheme by using electric field, current controlled Scanning Probe Lithography (FE-SPL) in order to pattern structures on different samples was developed. This work aims to manufacture nanostructures into different resist by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. The challenge for future quantum devices, generated by SPL and cryogenic etching, is finding a resist that is at most 10 nm in thickness and has a plasma durability high enough for pattern transfer into silicon. As a first step towards future quantum devices the silicon-to-resist selectivity of calixarene, AZ Barli, poly (3-hexylthiophen-2, 5-diyl) and polymethylmethacrylat for the anisotropic cryogenic dry etching process was estimated. A silicon-to-resist selectivity of about 4:1 for each of these resists was found. With these results, nano-scale, highly parallel double line features in silicon for future double patterning were generated.