Ge-Se-Sb-N-based OTS scaling perspectives for high-density 1 S1R crossbar arrays

In this paper, we address the scalability of GeSeSbN based Ovonic Threshold Switch selector for high density crossbar integration. Impact of cell size down to 80nm on selector electrical characteristics, typical switching voltages and currents are deeply investigated on kbit arrays. Experimental results, combined with semi-analytical model, demonstrate a filamentary behavior in the OTS switching operation. OTS endurance failure is investigated. Device breakdown is correlated to a maximum amount of electronic charges flowing through the stack. Cell downscaling improves OTS insulating capabilities without any switching voltage increase, allowing high density crossbar integration and low voltage consumption, with 200Mb bank size estimated for 80nm OTS cell size with ∼2.3V switching voltage.