Boron Implantation into GaAs/Ga0.5In0.5P Heterostructures

The electrical effect of implantation of boron ions with energies from 100 keV to 360 keV into GaAs and Ga0.5In0.5P has been studied. The implantation dose varied from 5?1011 cm-2 to 5?1013 cm-2. Resistivities higher than 1?105 ? cm for both n-type GaAs and n-type GaInP were measured. C?V and breakdown voltage measurements were used to characterize the electrical properties of implanted n GaInP. GaInP appears to be more sensitive to boron implantation than GaAs, and higher resistivities can be obtained with lower boron doses. Boron implantation at 200 keV followed by a 10-min annealing (T=416 ? C) generates a mid-gap trap level at 1.04?0.02 eV below the GaInP conduction band for Q=2?1012 cm-2 and a trap level at 0.92?0.02 eV for Q=5?1012 cm-2. Low-dose boron ion implantation can give rise to a GaInP passivation-like layer.