Carriers mobility of InAs- and InP- rich InAs-InP solid solutions irradiated by fast neutrons

We have studied the low temperature charge carriers mobility in bulk single crystals of InAs- and InP- rich InAs-InP solid solutions irradiated with maximum integral flux 2⋅1018 n/cm2 of fast neutrons. Influence of minor component small addition in InAs-InP solid solutions has been revealed. There are also presented data of radiation defects thermal stability.