Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition

Y2O3 thin films are fabricated on Si (100) wafer by using showerhead type direct PEALD system. The commercial tris (methylcyclopenta dienyl) yttrium ((MeCp3)3Y) precursor and oxygen plasma are used as a precursor and as a reactant. The growth rate per cycle is increased slightly from 0.1nm/cycle to 0.13nm/cycle, as the substrate temperature is increased from 175¢aC to 325¢aC. The crystallinity and density of Y2O3 thin films are also increased as the substrate temperature is increased. Carbon contaminations and film stoichiometry are improved due to high reactivity of plasma species. Dielectric constants of Y2O3 thin films are in range of 15~17 calculated by capacitance – voltage characteristics.