A New Method For Evaluating Temperature Distribution By Using Si + + B + Implantation

A method for evaluating temperature distributions between 400 A‚°C and 600 A‚°C have been studied by utilizing Si+ + B+ implantation. From the measurement of the sheet resistance(ps ), the equations shown in ps =3.8x10-8( t )-0.6 exp(Ea / kT) (Furnace anneal), Ps = 9.0x10-9( t )-0.5 exp( Ea / kT) (RTA) are obtained. And an obtained activation energy ( Ea) of 1.9eV is equivalent to that of solid phase epitaxial regrowth. From the distribution of the sheet resistance, the estimation of the temperature distribution between 400A‚°C and 600 A‚°C becomes possible for annealing times from lsec. to lhour.