Epitaxial formation of SiC on (100) Diamond
2020
We
demonstrate locally the coherent formation of silicon carbide
(SiC) on diamond, a rare example of heteroepitaxy with a lattice mismatch
that exceeds 20%. High-resolution transmission electron microscopy
confirms the quality and atomic structure near the interface. Guided
by molecular dynamics simulations, a theoretical model is proposed
for the interface wherein the large lattice strain is alleviated via
point dislocations in a two-dimensional plane without forming extended
defects in three dimensions. The possibility of realizing heterojunctions
of technologically important materials such as SiC with diamond offers
promising pathways for thermal management of high-power electronics.
At a fundamental level, the study redefines our understanding of SiC
and diamond heteroepitaxy and furthers our understanding of large
lattice mismatched interfaces.
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