MOVPE growth optimization of high quality InGaN films.

In this paper growth of high quality InGaN films on (0001) sapphire substrates by atmospheric pressure organometallic vapour phase epitaxy in a vertical rotating disk reactor is investigated. The InGaN layers grown above 800 °C are transparent and show no In-droplets on the surface. The In-content varies between 56 and 9 % for growth temperatures between 700 and 850 °C. The DC X-ray rocking curve of InGaN typically shows a FWHM between 8 and 15 arcmin. Room temperature PL shows an intense band edge emission with a FWHM between 100 and 200 meV for an In-content of 9 and 56 %. The initial efforts on QW growth are discussed.