OXIDATION PROPERTIES OF Cr(N,O) THIN FILMS SYNTHESIZED BY PULSED LASER DEPOSITION

Chromium oxynitride (Cr(N,O)) thin films have been successfully prepared by using pulsed laser deposition. The oxygen content in the thin films ( x ) was controlled by changing experimental conditions. From the results of oxidation tests, the B1 (NaCl type) phase in Cr(N,O) thin films with x = 3 at. % exists up to T = 600 °C, whereas Cr(N,O) thin films with x = 30 at. % contain B1 phase at T = 800 °C. As one of the reasons to explain this fact, the existence of the oxide layer formed on the Cr(N,O) crystallites surface by the oxygen atoms dissolved in B1 structure is considered.