The Structure and Properties of Sn/SiSn-nanodisperse Alloy Thin Films

Near-infrared brain imaging technology has great advantages in brain imaging and inspection of brain disorders compared to traditional brain imaging technology. Silicon-tin (SiSn) alloys are expected to be the material for infrared brain imaging detectors. The structure and properties of the SiSn alloy thin films with relatively low Sn concentration, which are the key for it to be used in near-infrared brain imaging technology, have not been reported yet. Here, we report the deposition time, growth temperature, microstructure, resistivity, and transmittance of amorphous silicon-tin (a-Si1-xSnx) alloy thin films prepared by radio frequency (RF) magnetron sputtering. Reasonable deposition time and growth temperature for the preparation of the films are given in this paper. Sn nanocrystals are observed in the a-Si1-xSnx alloy thin films. The variations in resistivity and transmittance indicate that it has excellent electrical and optical properties so that it can be used as a near-infrared brain imaging detector material.